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Typical Performance Characteristics
Figure 1. On-Region Characteristics
2.0
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3.0
V GS = 10V
V GS = 3V
4V
1.5
5V
2.5
4.5V
5V
4V
2.0
7V
6V
1.0
1.5
3V
0.5
1.0
9V
10V
0.0
2V
0.5
8V
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V DS . DRAIN-SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
3.0
V DS = 10V
I D = 500 mA
2.5
2.0
1.5
1.0
0.5
I D . DRAIN-SOURCE CURRENT(A)
Figure 4. On-Resistance Variation with
Gate-Source Voltage
-50
0
50
100
150
T J . JUNCTION TEMPERATURE( C)
o
Figure 5. Transfer Characteristics
1.0
Figure 6. Gate Threshold Variation with
Temperature
2.0
25( C)
V DS = 10V
o
V DS = V GS
T J = -25( C)
150( C)
0.8
0.6
o
o
1.8
1.6
I D = 1 mA
125( C)
I D = 0.25 mA
o
75( C)
0.4
0.2
0.0
o
1.4
1.2
1.0
2
3
4
5
6
-50
0
50
100
150
T J . JUNCTION TEMPERATURE( C)
V GS . GATE-SOURCE VOLTAGE (V)
? 2011 Fairchild Semiconductor Corporation
2N7002K Rev. A3
3
o
www.fairchildsemi.com
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